| 激光CVD纳米氮化硅的制备工艺研究 |
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| 引用本文： | 王卫乡,刘颂豪,李道火,刘宗才. 激光CVD纳米氮化硅的制备工艺研究[J]. 应用激光, 1995, 0(3) |
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| 作者姓名： | 王卫乡 刘颂豪 李道火 刘宗才 |
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| 作者单位： | 华南师范大学量子电子学研究所，中科院安徽光机所 |
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| 基金项目： | 国家自然科学基金，广东省高教局重点学科和广东省自然科学基金 |
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| 摘 要： | 研究了激光诱导化学气相沉积纳米氮化硅的制备工艺过程，探讨了制备工艺参数与粉末特征的关系，获得较佳的工艺参数：激光功率密度２０００Ｗ／ｃｍ２，反应气体配比ΦＮＨ３／ΦＳＨ４＝４，反应气体总流量２００ｃｍ３／ｓ，反应池压力３５ｋＰａ。
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| 关 键 词： | 激光诱导化学气相沉积，纳米氮化硅 |
Study on the Preparation Techniques of Laser-Induced Chemical Vapor Deposited Nanosized Silicon Nitride |
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| Wang Weixiang, Liu Songhao. Study on the Preparation Techniques of Laser-Induced Chemical Vapor Deposited Nanosized Silicon Nitride[J]. Applied Laser, 1995, 0(3) |
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| Authors: | Wang Weixiang Liu Songhao |
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| Abstract: | The preparation processes of laser-induced chemical vapor deposited nanosized silicon nitride were studied. The preparation parameters affect the synthesis process and the charcteristics of nanosized silicon nitride was discussed. The optimum preparation conditions are as follows. The power density of CO2 laser is 2000 W/cm2. The reactant gas ratio of NH3/SiH4 is 4. The total flow rate of reactant gases is 200cm3/s. And the reaction cell pressure is 35kpa. |
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| Keywords: | laser-induced chemical vapor deposition nanosized silicon nitride |
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