首页 | 本学科首页   官方微博 | 高级检索  
     

溶剂热法合成CoS纳米晶及其表征
引用本文:龙曾成,伍秋美,杨海林,阮建明. 溶剂热法合成CoS纳米晶及其表征[J]. 粉末冶金材料科学与工程, 2011, 0(6): 886-891
作者姓名:龙曾成  伍秋美  杨海林  阮建明
作者单位:中南大学粉末冶金国家重点实验室
基金项目:国家自然科学基金资助项目(50774096);中南大学中央高校基本科研业务费专项资金资助项目(2001QNT046);中南大学博士后基金资助项目;中国博士后基金资助项目;湖南省博士后科研计划项目
摘    要:以六水合硝酸钴(Co(NO3)2·6H2O)和硫脲为原料,采用混合溶剂热法制备硫化钴(COS)纳米晶.利用X射线衍射(XRD),扫描电镜(SEM)和透射电镜(TEM)对硫化钴纳米晶的组成、粒径及表面形貌进行表征.结果表明,在180℃恒温条件下所得粉末样品为六方相CoS纳米粉末,粉末粒径在40nim左右.粉末的产率随温度...

关 键 词:纳米CoS  溶剂热法  分散剂

Solvothermal synthesis and characterization of cobalt sulfide nanocrystals
LONG Zeng-cheng,WU Qiu-mei,YANG Hai-lin,RUAN Jian-ming. Solvothermal synthesis and characterization of cobalt sulfide nanocrystals[J]. materials science and engineering of powder metallurgy, 2011, 0(6): 886-891
Authors:LONG Zeng-cheng  WU Qiu-mei  YANG Hai-lin  RUAN Jian-ming
Affiliation:(State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China)
Abstract:The CoS nanocrystals were synthesized by a solvethermal method,using Co(NO3)2-6H2O and thiourea as raw materials.Composition,particle size and surface morphology of the samples were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM) and transmission electron microscopy(TEM).The results show that the as-prepared material are CoS nanoparticles at 180 ℃,witch diameter is about 40 nm.Powder production rate increases with increasing temperature,when the reaction temperature rises to 180 ℃,the yield close to 60%.When temperature further increases to 200 ℃,the yield remains unchanged,but abnormal grain growth happened.Addition of dispersant PEG can effectively control the size of the particles and inhibit the reunite of products.In additions,higher degree of crystallinity of the CoS nanocrystals can be synthesized by reducing the content of organic solvent EG,but it is not beneficial to control powder particle size,because the reaction rate is too fast.
Keywords:CoS nanoparticles  solvothermal method  dispersant
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号