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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Authors:Martina Baeumler  Frank Gütle  Vladimir Polyakov  Markus Cäsar  Michael Dammann  Helmer Konstanzer  Wilfried Pletschen  Wolfgang Bronner  Rüdiger Quay  Patrick Waltereit  Michael Mikulla  Oliver Ambacher  Franck Bourgeois  Reza Behtash  Klaus J. Riepe  Paul J. van der Wel  Jos Klappe  Thomas Rödle
Affiliation:1. Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108, Freiburg, Germany
2. United Monolithic Semiconductors, Wilhelm-Runge-Strasse 11, 89081, Ulm, Germany
3. NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands
Abstract:
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