| 一种新的兼容栅偏源结构AlGaN/GaN HEMT的小信号模型 |
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| 引用本文： | 马腾,郝跃,陈炽,马晓华. 一种新的兼容栅偏源结构AlGaN/GaN HEMT的小信号模型[J]. 半导体学报, 2010, 31(6): 064002-5 |
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| 作者姓名： | 马腾 郝跃 陈炽 马晓华 |
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| 作者单位： | National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China |
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| 摘 要： | 本文提出了一种新的AlGaN/GaN HEMT小信号模型，此模型可在20GHz以内对栅偏源结构HEMT进行精确模拟。模型中的寄生参数由零偏及截止两种偏置下的S参数来决定，本征部分采用直接提取的方式得出。本模型中的所有参数及比例系数均由器件结构决定，并不涉及任何优化算法，因而保证了模型参数值与物理意义的统一。
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| 关 键 词： | HEMT器件 AlGaN 小信号模型 非对称 高电子迁移率晶体管 组成部分 器件结构 物理意义 |
| 收稿时间： | 2009-12-01 |
| 修稿时间： | 2010-02-06 |
A new small-signal model for asymmetrical AlGaN/GaN HEMTs |
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| Ma Teng,Hao Yue,Chen Chi and Ma Xiaohua. A new small-signal model for asymmetrical AlGaN/GaN HEMTs[J]. Chinese Journal of Semiconductors, 2010, 31(6): 064002-5 |
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| Authors: | Ma Teng Hao Yue Chen Chi Ma Xiaohua |
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| Affiliation: | National Key Laboratory of Wide Band-Gap Semiconductor Technology,Department of Microelectronics, Xidian University,Xi＇an 710071,China |
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| Abstract: | |
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| Keywords: | small-signal model GaN HEMT parameter extraction asymmetrical structure |
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