| AlGaN/GaN HEMT势垒层厚度影响的模拟及优化 |
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| 引用本文： | 申艳芬,林兆军,李惠军,张明华,魏晓坷,刘岩. AlGaN/GaN HEMT势垒层厚度影响的模拟及优化[J]. 微纳电子技术, 2011, 48(3): 150-154,193. DOI: 10.3969.j.issn.1671-4776.2011.03.003 |
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| 作者姓名： | 申艳芬 林兆军 李惠军 张明华 魏晓坷 刘岩 |
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| 作者单位： | 1. 山东大学信息科学与工程学院,济南,250100
2. 山东大学物理微电子学院,济南,250100 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 完成了对AlGaN/GaN高电子迁移率晶体管(HEMT)的结构设计及器件物理特性的验证等工作.使用TCAD软件完成了该器件直流特性及微波特性等性能的模拟.建立该器件的极化效应模型是本项研究的重点.完成了对异质结条件下诸多模型参数的筛选及修正,得到了符合理论的模拟结果.器件特性的验证与优化基于势垒层厚度h的变化展开,研究...
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| 关 键 词： | AlGaN/GaN 高电子迁移率晶体管(HEMT) 二维电子气(2DEG) 极化效应 器件模型 |
Simulation and Optimization of the Barrier Layer Thickness of AlGaN/GaN HEMTs |
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| Shen Yanfen,Lin Zhaojun,Li Huijun,Zhang Minghua,Wei Xiaohe,Liu Yan. Simulation and Optimization of the Barrier Layer Thickness of AlGaN/GaN HEMTs[J]. Micronanoelectronic Technology, 2011, 48(3): 150-154,193. DOI: 10.3969.j.issn.1671-4776.2011.03.003 |
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| Authors: | Shen Yanfen Lin Zhaojun Li Huijun Zhang Minghua Wei Xiaohe Liu Yan |
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| Affiliation: | Shen Yanfen a,Lin Zhaojun b,Li Huijun a,Zhang Minghua a,Wei Xiaohe,Liu Yan a(a.School of Information Science and Engineering,b.School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) |
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| Abstract: | The structure design of AlGaN/GaN high electron mobility transistors(HEMTs) and verification of the device physical characteristics were completed.The simulations of the DC cha-racteristics and microwave properties were finished by TCAD software.The main point of the research is to establish the polarization effect model of the device.The choice and modification of many model parameters for heterojunction structures were completed.The simulation result is consistent with the theoretical value.The verificati... |
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| Keywords: | AlGaN/GaN |
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