A new small-signal MOSFET model and parameter extraction method for RF IC's application

In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10 GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance g_m, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.