A 2D physically based compact model for advanced power bipolar devices |
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| Authors: | P.M. Igic M.S. Towers P.A. Mawby |
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| Affiliation: | Department of Electrical and Electronic Engineering, University of Wales, Singleton Park, SA2 8PP Swansea, United Kingdom |
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| Abstract: | A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500 V-1500 A flat pack TOSHIBA IEGT. |
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| Keywords: | Compact model Gate turn-off thyristor Insulated gate bipolar transistor |
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