Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE |
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Authors: | N Chaaben T Boufaden B El Jani |
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Affiliation: | a Unité de Recherche sur les Hétéro-Epitaxy et Applications, Faculté des sciences de Monastir, Monastir 5000, Tunisia b Center for Future Health, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642, USA |
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Abstract: | GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 °C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with 〈00.1〉 direction is observed and is clearly improved when the thickness of AlN buffer layer increases. Morphological changes in PS layer appearing after growth have been also discussed.GaN optical qualities were determined by photoluminescence at low and room temperature (RT). |
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Keywords: | GaN AlN buffer Porous silicon SEM Photoluminescence |
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