Field electron emission from amorphous CNx:B films |
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Authors: | Lan Zhang Huizhong Ma Huanling Hu |
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Affiliation: | a Department of Engineering Mechanics, Zhengzhou University, Zhengzhou 450002, People's Republic of China b An hui Optics and Fine Mechanics Institute, Chinese Academy of Sciences, Hefei 230031, People's Republic of China c Department of Physics, Zhengzhou University, Zhengzhou 450052, People's Republic of China |
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Abstract: | CNx:B thin films were prepared on titanium coated ceramic substrate by pulsed laser deposition technique (PLD). The microstructure of the film was examined using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The analyses indicate that the deposited samples are amorphous CNx:B thin films. Field electron emission characteristics of amorphous CNx:B thin films were measured in a vacuum chamber with a base pressure of about 3.2×10−5 Pa. The turn-on field of the film was 3.5 V/μm. The current density was 60 μA/cm2 at an electric field of 9 V/μm. The experimental results indicate that this film could be a promising material applicable to cold cathodes. |
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Keywords: | Amorphous CNx:B thin film Field electron emission Pulsed laser deposition technique |
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