Synthesis and properties of dielectric (HfO2)1 ? x
(Sc2O3)
x
films |
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| Authors: | L V Yakovkina T P Smirnova V O Borisov V N Kichai V V Kaichev |
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| Affiliation: | 1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090, Russia
2. Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090, Russia
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| Abstract: | (HfO2)1 ? x (Sc2O3) x films have been grown by chemical vapor deposition (CVD) using the volatile complexes hafnium 2,2,6,6-tetramethyl-3,5-heptanedionate (Hf(thd)4) and scandium 2,2,6,6-tetramethyl-3,5-heptanedionate (Sc(thd)3) as precursors. The composition and crystal structure of the films containing 1 to 36 at % Sc have been determined. The results demonstrate that, in the composition range 9 to 14 at % scandium, the films are nanocrystalline and consist of an orthorhombic three-component phase, which has not been reported previously. Using Al/(HfO2)1 ? x (Sc2O3) x /Si test structures, we have determined the dielectric permittivity of the films and the leakage current through the insulator as functions of scandium concentration. The permittivity of the films with the orthorhombic structure reaches k = 42–44, with a leakage current density no higher than ～10?8 A/cm2. |
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