Effect of annealing temperature on structural, electrical and optical properties of B-N codoped ZnO thin films |
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| Authors: | YR SuiB Yao L XiaoLL Yang YQ LiuFX Li M GaoGZ Xing S LiJH Yang |
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| Affiliation: | a Institute of Condensed State Physics, Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping, 136000, PR Chinab State Key Lab of Superhard Materials and Department of Physics, Jilin University, Changchun, 130023, PR Chinac School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia |
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| Abstract: | The B-N codoped p-type ZnO thin films have been prepared by radio frequency magnetron sputtering using a mixture of nitrogen and oxygen as sputtering gas. The effect of annealing temperature on the structural, electrical and optical properties of B-N codoped films was investigated by using X-ray diffraction, Hall-effect, photoluminescence and optical transmission measurements. Results indicated that the electrical properties of the films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 600 °C to 800 °C. The B-N codoped p-type ZnO film with good structural, electrical and optical properties can be obtained at an intermediate annealing temperature region (e.g., 650 °C). The codoped p-type ZnO had the lowest resistivity of 2.3 Ω cm, Hall mobility of 11 cm2/Vs and carrier concentration of 1.2 × 1017 cm− 3. |
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| Keywords: | Zinc oxide Boron Nitrogen Codoping Thin films Annealing temperature Magnetron sputtering |
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