n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors |
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Authors: | Hui Yeung Yu Tai Guo'an Sun Zhenhua Xu Zihan Wang Ning Yan Feng Lau Shu Ping |
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Affiliation: | Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China. |
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Abstract: | Periodic zinc oxide (ZnO) nanomeshes of different thicknesses were deposited on single-layer graphene to form back-gated field effect transistors (GFETs). The GFETs exhibit tunable electronic properties, featuring n- and p-type characteristics by merely controlling the thickness of the ZnO nanomesh layer. Furthermore, the effect of thermal strain on the GFETs from the substrate is suppressed by the ZnO nanomesh, which improves the thermal stability of the GFETs. This nanopatterning technique could modulate the electronic properties of the GFETs effectively. |
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