Low frequency noise and reliability properties pf 0.12 μm CMOS devices with Ta<sub>2</sub>O<sub>5</sub> as gate dielectrics期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Low frequency noise and reliability properties pf 0.12 μm CMOS devices with Ta₂O₅ as gate dielectrics

Authors:	M Fadlallah A Szewczyk C Giannakopoulos B Cretu F Monsieur T Devoivre J Jomaah G Ghibaudo

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