Doping Effects in Rare-Earth Borides |
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Authors: | T Mori T Shishido K Nakajima |
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Affiliation: | (1) National Institute for Materials Science, Namiki 1-1, Tsukuba 305-0044, Japan;(2) Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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Abstract: | Boron-rich cluster compounds are studied for their potential as high-temperature thermoelectric materials with low thermal
conductivity. Two B12 icosahedra systems with attractive thermoelectric properties have recently been discovered: p-type REB44Si2 (where RE stands for rare earth) and the anomalous n-type series of RE-B-C(N) homologous compounds. Three different doping effects of these compounds were investigated in this
work in an attempt to control the properties: doping disorder into REB44Si2, which is a variable-range hopping system, V-doping of YB44Si2, and C-doping (carbon composition control) of YB28.5C4. The attempt to enhance the Seebeck coefficient in TbB44Si2 through disorder was inconclusive, while V-doping of YB44Si2 had a negative effect on the thermoelectric properties. Controlling the carbon composition of YB28.5C4 appeared to be a promising route for increasing the absolute value of the Seebeck coefficient. |
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Keywords: | Thermoelectric high temperature boron boron carbide borides variable-range hopping disorder p-type n-type Seebeck coefficient |
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