| Hazy Backside Gettering with a-Si: H Film |
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| 引用本文： | 王锻强,孙茂友,翟富义,李美英,尤重远. Hazy Backside Gettering with a-Si: H Film[J]. 稀有金属(英文版), 1993, 0(1) |
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| 作者姓名： | 王锻强 孙茂友 翟富义 李美英 尤重远 |
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| 作者单位： | General Research Institute for Non-ferrous Metals Beijing China 100088，General Research Institute for Non-ferrous Metals Beijing China 100088，General Research Institute for Non-ferrous Metals Beijing China 100088，General Research Institute for Non-ferrous Metals Beijing China 100088，General Research Institute for Non-ferrous Metals Beijing China 100088 |
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| 摘 要： | Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glowdischarge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech-lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy-len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances thegettering effectiveness. The low temperature(200～300℃) process of growing extrinsic gettering film reducesthe processing contamination.
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Hazy Backside Gettering with a-Si: H Film |
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| Wang Duanqiang,Sun Maoyou,Zhai Fuyi,Li Meiying,You Zhongyuan General Research Institute for Nun-ferrous Metals,Beijing ,China. Hazy Backside Gettering with a-Si: H Film[J]. Rare Metals, 1993, 0(1) |
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| Authors: | Wang Duanqiang Sun Maoyou Zhai Fuyi Li Meiying You Zhongyuan General Research Institute for Nun-ferrous Metals Beijing China |
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| Affiliation: | Wang Duanqiang,Sun Maoyou,Zhai Fuyi,Li Meiying,You Zhongyuan General Research Institute for Nun-ferrous Metals,Beijing 100088,China |
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| Abstract: | |
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| Keywords: | Backside gettering a-Si:H B-doped film |
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