A high-frequency GaInP/GaAs heterojunction bipolar transistor withreduced base-collector capacitance using a selective buriedsub-collector |
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| Authors: | Yue-Fei Yang Chung-Chi Hsu Yang E.S. Hai-Jiang Ou |
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| Affiliation: | Dept. of Electr. Eng., Columbia Univ., New York, NY; |
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| Abstract: | A C-doped GaInP/GaAs HBT using a selective buried sub-collector has been fabricated by two growth steps. The device was fabricated with minimum overlap of the extrinsic base and the sub-collector region to reduce base-collector capacitance. The experiment shows that the base collector capacitance is reduced to about half of that of an HBT without selective buried sub-collector while the base resistance remains unchanged. A current gain of 35, fT of 50 GHz and fmax of 140 GHz are obtained with this technology |
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