三沟道BCCD在X光区光电特性的数值模拟

本文对三沟道体电荷耦合器件（BCCD）在X光区的光电特性进行了数值模拟，结果表明：磁对X光的吸收曲线了硅制的三沟道BCCD不能在XI我区实现多光谱成像，通过理论分析，指出了能保证BCCD在X光区工作的衬底材料所应满足的吸收曲线，利用这种新材料制成的三沟道BCCD，其光敏特性可以分别在1．8keV,1.2keV,0.6keV处出现最大值。

The Numerical Simulation of Photoelectric Characteristic of Three-channel Bulk Charge-coupled Device in the Region of X-ray

In this paper the photoelectric characteristics of the three channel bulk charge coupled device (BCCD) are simulated in the region of X ray.The results show that the silicon three channel BCCD can not realize multi spectral imaging in the region of X ray.Based on the result of theoretical research the absorption coefficient curve of a substrate material has be found,which ensure the three channel BCCD work in the region of X ray.The three channel BCCD made by the new material will have three maxim positions of the spectral photosensitivity at 1.8 keV,1.2 keV and 0.6 keV,respectively.