Inductivity phenomena in local polycrystalline silicon films

The capacitance-voltage characteristics of epitaxially grown polycrystalline silicon local films were investigated in the frequency range 0.465-10 MHz. A transition in the character of the capacitance from reactive conductivity to inductive behaviour was discovered.It is shown that under illumination the inductance transformed into a capacitance and the negative resistance region disappeared from the current- voltage curve.It is suggested that inductivity phenomena in polycrystalline silicon films occur by processes of recharging of deep levels.