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Structure and optical properties of CuGaSe2 thin films
Affiliation:1. Renewable Energy and Advanced Materials Laboratory, International University of Rabat, Morocco;2. Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Group of Optoelectronic of Semiconductors and Nanomaterials, ENSET, Mohammed V University in Rabat, Morocco;3. Laboratoire des Systèmes Electriques et Télécommunications, Université Ibn Tofail, Kenitra, Morocco;4. LCP-A2MC, Université de Lorraine, Metz, France;5. Laboratory of Engineering, Innovation and Management of Industrial Systems (LEIMIS), FST of Tangier, Abdelmalek Essaadi University, Morocco;6. Facultad de Ciencias Básicas Universidad de Medellín Medellín, Colombia;7. Centro de Investigación en Ciencias-IICBA Universidad Autónoma del Estado de Morelos Av. Universidad 1001, C.P. 62209, Cuernavaca, Morelos, Mexico
Abstract:The structure and optical properties of vacuum-deposited films of CuGaSe2 were studied at various substrate temperatures. Stoichiometric films could be obtained at substrate temperatures as low as 450 K. Epitaxial growth was observed on single-crystal NaCl substrates at temperatures above 500 K. The optical transition energies obtained at 1.68, 1.78 and 1.92 eV were in good agreement with previous results.
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