Effect of residual gas pressure on the epitaxial growth of vacuum-deposited chromium on Cu{111} substrates |
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| Affiliation: | 1. Metallurgical and Materials Engineering Department, University of São Paulo, Av. Prof. Mello Moraes 2463, 05508-030 São Paulo, SP, Brazil;2. LNNano - Brazilian Nanotechnology National Laboratory – CNPEM - Brazilian Center for Research in Energy and Materials, R. Giuseppe Máximo Scolfaro, 10000 - Polo II de Alta Tecnologia, 13083-970 Campinas, SP, Brazil;3. Mechanical Engineering Department, University of São Paulo, Av. Prof. Mello Moraes 2231, 05508-030 São Paulo, SP, Brazil;1. Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India;2. Centre of Nano-science and Engineering, Indian Institute of Science, Bangalore 560012, India |
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| Abstract: | Transmission electron microscopy, electron diffraction and Auger electron spectroscopy were used to study the effect of vacuum conditions on the epitaxial growth of vacuum-deposited chromium films of thicknesses less than 40 nm on Cu{111} substrates. The chromium films were condensed (i) in ultrahigh vacuum at 10−9 Torr, (ii) at total pressures of 10−5, 10−6 and 5 × 10−8 Torr and (iii) at oxygen partial pressures of 5 × 10−9, 10−7 and 10−6 Torr. The presence of contaminants during the chromium evaporation suppressed the formation of Kurdjumov-Sachs orientations. A low oxygen partial pressure was most effective in altering the orientation and morphology of the deposits. |
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