Characterization of reacted ohmic contacts to GaAs |
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| Affiliation: | 1. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Jeonbuk National University, Jeonju 561-756, Republic of Korea;1. Division of Biomedical Engineering, College of Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9, Canada;2. Department of Computer Science, University of Saskatchewan, Saskatoon, SK S7N 5A9, Canada;3. Department of Mechanical Engineering, College of Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9, Canada;4. Canadian Light Source, Saskatoon, S7N 2V3, SK, Canada;5. Department of Chemical and Biological Engineering, College of Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9, Canada |
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| Abstract: | In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity. |
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