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Conduction mechanisms in Pd/SiO2/n-Si Schottky diode hydrogen detectors
Affiliation:1. Department of Epidemiology and Population Health, Albert Einstein College of Medicine, Bronx, New York;2. Department of Family Medicine and Public Health, University of California San Diego, La Jolla, California;3. Department of Preventive Medicine, University of Tennessee Health Science Center, Memphis, Tennessee;4. Department of Occupational Medicine, Epidemiology and Prevention, Northwell Health, Great Neck, New York;5. Department of Medicine, Vanderbilt University, Nashville, Tennessee;6. Department of Epidemiology and Environmental Health, School of Public Health and Health Professions, University at Buffalo, Buffalo, New York;;7. Department of Community Health and Health Behavior, School of Public Health and Health Professions, University at Buffalo, Buffalo, New York;1. Nanoelectronics Lab, Dept. of ECE, Sree Vidyanikethan Engineering College, Tirupati 517102, India;2. Dept of ECE, Vishnu Institute of Technology, Bhimavaram 534202, India;3. Dept of CSE, Vishnu Institute of Technology, Bhimavaram 534202, India;4. Dept of ECE, B N M Institute of Technology, Bangalore 560070, India;1. Department of Science, Sona College of Technology, Salem 636 005, Tamil Nadu, India;2. Department of Physics, Condensed Matter Research Laboratory (CMRL), Bannari Amman Institute of Technology, Sathyamangalam 638 401, Tamil Nadu, India
Abstract:The electrical characteristics of Pd/SiO2/n-Si Schottky barrier type structures are reported over a range of temperatures and after exposure to different ambient conditions. A number of conduction mechanisms through the diodes have been identified. Exposure to hydrogen gas is shown to produce an increase in the conductivity of the diodes and a voltage shift in the capacitance-bias characteristics; this is attributed to both an increase in the interface state density and also to a reduction in the work function of the palladium. It is suggested that the nature of the interfacial oxide layer is of paramount importance in determining the dominant conduction process through the devices.
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