Lattice distortion energy spectra of thin evaporated silver films |
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Affiliation: | 1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076, Maharashtra, India;2. University of Grenoble, Alpes, CRNS. Grenoble INP*, LMGP, F-38000 Grenoble, France;3. Electrical Engineering, Ohio State University, Columbus, Ohio 43210, USA;4. Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Nadia 741235, West Bengal, India |
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Abstract: | Thin silver films (thickness, 12.5–160 nm) were evaporated under ultrahigh vacuum conditions onto clean glass substrates (substrate temperature, 225 K). During the growth process a large number of lattice defects were incorporated (condensation rate, 0.2 and 0.01 nm s-1). The films were subjected to heat treatment (constant heating rate, 0.1 K s-1) and the variation in the electrical resistance was measured as a function of temperature. Using Vand's theory the initial lattice distortion energy spectra of the films were determined from the resistance-temperature data. The lattice distortion energy function has maximum values. While the number of distortions with a decay energy of about 0.8 eV increases rapidly with decreasing film thickness, the number of distortions with a decay energy of about 0.93 eV varies only slightly. |
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