Schottky diode analysis for evaluation of RIE effects on silicon surfaces |
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| Affiliation: | 1. Physics Department, University of Allahabad, Prayagraj, 211 002, India;2. Inter University Accelerator Centre, New Delhi, 110 0067, India;3. Department of Sustainable Energy & Engineering, IIT Kanpur, Kanpur, 208 016, India;1. Components and Materials Research Laboratory, ETRI, Yuseong, Daejeon 305-700, Republic of Korea;2. Department of Advanced Device Technology, UST, Yuseong, Daejeon 305-350, Republic of Korea;3. Department of Electrical Engineering, KAIST, Yuseong, Daejeon 305-701, Republic of Korea;4. Department of Materials Science & Engineering, Hallym University, Chuncheon 200-702, Republic of Korea |
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| Abstract: | Electrical measurements on titanium-Schottky diodes were used to evaluate the effects of reactive ion etching (RIE) processing and various post-RIE treatments on silicon substrates. Based on a model for the Schottky barrier with an interfacial layer, the measurements allow one to estimate the effect of an oxygen treatment or an O2-RIE clean-up with a wet chemical etch on the C- and F-containing insulator layer and the residual damage to a silicon surface by different RIE systems. It was shown that the oxygen treatment reduced the thickness of the “polymeric” layer, and decreased the density of surface states. A significant residual damage after O2 clean-up with HF dip was found for the CF4/H2 system. Lastly, the effect of thermal annealing at 950°C was investigated, and it was found that it gives rise to an increased density of surface states. |
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