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Comparison of TiSi2 films prepared by diffusion and by co-evaporation
Affiliation:1. Laboratory for Microstructures, Shanghai University, Shanghai 200444, China;2. State Key Laboratory of Advanced Special Steel, Shanghai University, Shanghai 200444, China;3. Department of Chemistry and Physics, Fayetteville State University, Fayetteville, NC 28301, USA;4. National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA;1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China;2. School of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China;1. Purdue University, Materials Engineering, 701 West Stadium Ave, 47907, West Lafayette, IN, USA;2. Institute of Digital Materials Science, Karlsruhe University of Applied Sciences, Moltkestr. 30, 76133, Karlsruhe, Germany;3. Institute of Applied Materials, KIT, Strasse Am Forum 7, 76131, Karlsruhe, Germany;4. Institute of Applied Materials, KIT, Haid-und-Neu-Str. 7, 76131, Karlsruhe, Germany;1. Department of Physics, Chalmers University of Technology, 412 96, Gothenburg, Sweden;2. Department of Material Science and Engineering, University of Maryland, College Park, 20742, MD, USA
Abstract:The effect of the preparation technique of TiSi2 films on their properties is discussed. Films formed by the diffusion of silicon into a titanium layer evaporated on top of an Si/SiO2/n+-poly-Si structure (where poly-Si is poltcrystalline silicon) have some unfavorable properties for metal/oxide/semiconductor technology. A significant improvement can be achieved using the co-evaporation technique to form the silicide layer. Superior silicides are obtained by sintering the co-evaporated TiSi2 using short-time annealing.
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