New method of determination of the flat-band voltage in SOI MOS structures |
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| Affiliation: | 1. National Institute of Materials Physics,405A Atomistilor Street, 077125 Magurele, Romania;2. Academy of Romanian Scientists, 54 Splaiul Independentei, 050094 Bucuresti, Romania;1. University of Caen Normandie, UMR6072 GREYC, F-14050 Caen, France;2. ENSICAEN, UMR6072 GREYC, F-14050 Caen, France;3. Imec, Kapeldreef 75, B-3001 Leuven, Belgium;1. CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;2. Univ. Grenoble Alpes, IMEP-LAHC, Grenoble INP Minatec, CNRS, F-38000 Grenoble, France |
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| Abstract: | A new method to determine the flat-band voltage VFB in a MOS structure has been proposed. It is based on measuring a voltage which corresponds to a capacitance equal to 0.9 of the oxide capacitance. The method is especially suited for SOI (silicon on insulator) structures, but could be useful in conventional types. In the latter case the error of determination of VFB caused by an uncertainty in doping concentration is smaller than in the classical procedure, especially when the thickness of the dielectric is small. |
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