首页 | 本学科首页   官方微博 | 高级检索  
     


Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K
Affiliation:1. Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, PF 100565 Ilmenau, 98684 Ilmenau, Germany;2. X-FAB Semiconductor Foundries AG, Haarbergstr. 67, 99097 Erfurt, Germany;3. Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Caruso 16, 56122 Pisa, Italy;1. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China;2. Lash Miller Chemical Laboratories, Department of Chemistry and Institute of Optical Sciences, University of Toronto, 80 Saint George Street, Toronto, Ontario, Canada, M5S 3H6;3. University Research Facility in Materials Characterization and Device Fabrication, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
Abstract:Based on previous results band-gap narrowing in heavily doped silicon at 300 K is investigated and expressed in terms of impurity size-and-doping effects. The results obtained for n- and p-type heavily doped silicon are compared with other theories and experiments.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号