Properties of silicon nitride films prepared by plasma-enhanced chemical vapour deposition of SiH4-N2 mixtures |
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| Affiliation: | 1. Department of Materials Science and Engineering, University of Connecticut, Storrs, CT 06269-3136, USA;2. Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA |
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| Abstract: | The refractive indices and IR absorption spectra are measured for silicon nitride films plasma deposited from SiH4-N2-H2 gas mixtures. The composition of the film (N:Si ratio) is derived from the value of the refractive index and the concentration of bonded hydrogen as Si-H and N-H in the film is estimated from the absorption intensities in the IR spectrum. The optimum deposition conditions for giving excellent insulating silicon nitride films are confirmed to be same as the conditions for giving films with stoichoimetric composition and the lowest amount of incorporated hydrogen. |
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