Interpretation of dielectric properties of thin film Al/Al2O3/Au structures |
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| Affiliation: | 1. Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143, Azerbaijan;2. Baku Branch of M.V. Lomonosov Moscow State University, Baku AZ-1143, Azerbaijan;3. Institute of Research and Development, Duy Tan University, 550000 Da Nang, Vietnam;4. Bayerisches Geoinstitute, University Bayreuth, d-95440 Bayreuth, Germany;5. Institute of Physics of National Academy Sciences of Belarus, 220072 Minsk, Belarus;1. Department of Pediatrics, Dr Josep Trueta Hospital, Girona, Spain;2. Department of Gynecology, Dr Josep Trueta Hospital, Girona, Spain;3. Department of Pediatrics, Girona Institute for Biomedical Research, Girona, Spain;4. Department of Physical Therapy, EUSES University of Girona, Girona, Spain;5. Institute of Molecular Genetics of Montpellier, CNRS, University Montpellier, Montpellier, France;6. Department of Development and Regeneration, University of Leuven, Leuven, Belgium;7. Endocrinology, Pediatric Research Institute, Sant Joan de Déu Children’s Hospital, University of Barcelona, Barcelona, Spain;8. Biomedical Research Center in Diabetes and Associated Metabolic Disorders, ISCIII, Madrid, Spain;1. Joint Institute for Nuclear Research, Dubna, Moscow Distr., 141980, Russia;2. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, АZ1143, Azerbaijan;3. Istanbul Technical University, Istanbul, 34469, Turkey;4. Azerbaijan State Pedagogical University, Baku, АZ1143, Azerbaijan;5. Institute of Physics, Azerbaijan National Academy of Sciences, Baku, АZ1143, Azerbaijan;6. Department of Physics, Busitema University, P.O. Box 236, Tororo, Uganda;7. Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Tashkent, 100214, Uzbekistan |
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| Abstract: | On the basis of experimental data previously presented, the dielectric properties of thin film Al/Al2O3/Au structures were investigated in the frequency range 10-2−10+5Hz. The results of the measurements suggested the existence of two laws of dispersion of the complex dielectric susceptibility, each obeying the empirical relation χ′(ω)∝χ≈(ω)∝ωn−1, with n = 0.14 in the low frequency range and n = 0.88 at higher frequencies. In this paper, an equivalent circuit is proposed; it takes into account, firstly, the two laws of dispersion which coexist over the whole temperature (393–505 K) and frequency ranges studied and, secondly, the existence of a thin interfacial zone at the electrode(s), which is less conducting than the bulk of the dielectric. |
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