Optically controlled characteristics in an ion-implanted silicon MESFET |
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Affiliation: | 1. Institute of Life Sciences, Swansea University, Singleton Park, Swansea, Wales SA2 8PP, United Kingdom;2. Australian Institute of Health Innovation, Level 6, 75 Talavera Road, Macquarie University, New South Wales 2109, Australia;3. School of Human and Health Science, Swansea University, Singleton Park, Swansea, Wales SA2 8PP, United Kingdom |
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Abstract: | OPFETs (optical FETs) are useful as compatible IC transducers in optical communication systems, although APDs (avalanche photo diodes) have higher multiplication gain and speed of response. Studies have been made on the optically controlled characteristics of an ion-implanted Si MESFET which show that drain-source current can be enhanced with increasing radiation flux intensity and lower wavelength of operation. Furthermore, the threshold voltage is found to be reduced under normally OFF conditions and increased under normally ON conditions for higher flux density and lower wavelength. The effect of radiation becomes predominant over the impurity concentration at flux densities greater than or equal to 1018/m2 and wavelengths less than or equal to 0.78 μm. |
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