Properties of indium tin oxide films prepared by ion-assisted deposition |
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| Affiliation: | 1. Division of Applied Physics, Commonwealth Scientific and Industrial Research Organization, Sydney 2070 Australia;1. Schizophrenia Program, Shanghai Mental Health Center, Shanghai Jiao Tong University School of Medicine, Shanghai, China;2. Department of Psychiatry, Jinhua Second Hospital, Jinhua, Zhejiang, China;3. Department of Psychiatry, Wenzhou Kangning Hospital, Wenzhou, Zhejiang, China;1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;1. Chongqing Key Laboratory of Modern Photoelectric Detection Technology and Instrument, Chongqing Key Laboratory of Fiber Optic Sensor and Photodetector, Chongqing University of Technology, Chongqing 400054, China;2. Key Laboratory of Low-grade Energy Utilization Technologies and Systems (Chongqing University), Ministry of Education, Chongqing 400030, China;1. Department of Physics, Sant Gadge Baba Amravati University, Amravati, Maharashtra 444602, India;2. Department of Physics, Shri Shivaji College of Arts, Commerce and Science, Akola, Maharashtra 444003, India;3. Department of Chemistry, Shri Anand College of Science, Pathardi, Ahmednagar, Maharashtra 414102, India;1. National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China;2. Peng Cheng Laboratory, Shenzhen 518000, China |
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| Abstract: | Conducting transparent films of indium tin oxide were deposited by 100 eV oxygen-ion-assisted deposition. A refractive index of 2.13 at 550 nm was obtained for films deposited onto ambient temperature substrates. The refractive index decreased with increasing substrate temperature to a value of 2.0 at 400°C. The sheet resistance of films 135 nm thick decreased from 800 Ω/□ for layers deposited onto room temperature substrates to around 25 Ω/□ at 400°C. Structural studies revealed that ion-assisted deposition onto ambient temperature substrates produced amorphous films, and that at temperatures above 100°C the films exhibit In2O3 crystallinity. In addition, it was found that the number of voids in the ion-bombarded films was reduced relative to that in films produced by conventional reactive evaporation. |
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