Experimental investigation of arsenic enrichment at annealed GaAs-anodic oxide interfaces |
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| Affiliation: | 1. School of Mechanical Engineering, Southeast University, Nanjing, Jiangsu 211189, China;2. Department of Physics, Southeast University, Nanjing 210096, China;3. School of Materials Science and Engineering, Southeast University, Nanjing 211189, China;1. Alferov University, Saint-Petersburg 194021, Russia;2. Ioffe Institute, Saint-Petersburg 194021, Russia;3. Peter the Great Saint-Petersburg Polytechnic University, Saint-Petersburg 195251, Russia;4. Saint Petersburg Electrotechnical University LETI, Saint-Petersburg 197376, Russia;5. ITMO University, Saint-Petersburg 197101, Russia;1. School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100, PR China;2. Department of Energy Materials and Technology, General Research Institute for Nonferrous Metals, Beijing, China;1. Department of Electrical Engineering, Ferdowsi University of Mashhad, 9177948974, Mashhad, Iran;2. Organic Nano-Electronic and Organic Solar Cell Lab, Ferdowsi University of Mashhad, 9177948974, Mashhad, Iran;3. Dept. of Micro- and Nanoel. Syst., Ilmenau University of Technology, 98684, Ilmenau, Germany |
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| Abstract: | The time-temperature annealing conditions which lead to the greatest arsenic enrichment at GaAs-anodic oxide interfaces were investigated, mainly by combining photoluminescence and Rutherford backscattering analysis. It is found that a 20 min treatment at 550°C or a 60 min treatment at 500°C is likely to give the thickest intermixed arsenic-rich layer. These arsenic-enriched GaAs surfaces may be used to prepare GaAs/InAs ohmic contacts after etching the remaining oxide and the post-deposition of an indium metal layer and subsequent alloying treatments. |
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