Double-heterostructure InGaAs/InP PIN photodetectors |
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| Affiliation: | 1. Laboratoire d''Analyse des Signaux et Systemes, Department of Electronics, Mohamed Boudiaf University, M''sila 28000, Algeria;2. Nuclear research center, BP 180 Ain Oussera, Djelfa 17000, Algeria;1. Department of Physics, Al-Hussein Bin Talal University, Maan 71111, Jordan;2. College of Engineering, University of Dammam, Dammam 31451, Saudi Arabia;3. Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA |
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| Abstract: | High-quality n+InP/InGaAs/p+InP double-heterojunction PIN photodetectors have been grown by special liquid-phase-epitaxial techniques. This development allows front illumination which substantially facilitates device fabrication and operation. Furthermore, good control of pn junction location and layer thickness in these structures permits optimization of high-speed performance. For convenient device areas, low dark-current densities (2.5×10−5 A/cm2) and short response-times (50 ps) are obtained. High-speed design parameters are discussed, and the reduction of response times to 30 ps is predicted. |
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