Ion-beam-induced silicidation and its use in very-large-scale integration processing |
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| Affiliation: | 1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;2. Department of Chemistry, Biology and Environmental Science, Faculty of Science, Nara Women’s University, Nara, Nara 630-8506, Japan;3. National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan;1. Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;2. Department of Chemistry, Biology and Environmental Science, Faculty of Science, Nara Women’s University, Nara, Nara, 630-8506, Japan;3. Cerast Laboratory, Setagaya, Tokyo, 154-0011, Japan;1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;2. Department of Chemistry, Biology and Environmental Science, Faculty of Science, Nara Women’s University, Nara, Nara 630-8506, Japan;3. National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan |
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| Abstract: | The ion-beam-induced reaction of metal films on a silicon substrates is studied with emphasis on applications in very-large-scale integration processing. Using the Ti/Si system as an example it is shown that, in combination with subsequent rapid thermal annealing, silicides with excellent properties are formed in a uniform and reproducible way. When using dopant elements for the mixing, shallow junctions with a depth of the order of 0.1 μm are demonstrated, which show excellent electrical properties. The advantages of the ion-beam-induced metal-silicon reaction in a self-aligned silicide process are discussed. |
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