Current gain of narrow-base transistors |
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Affiliation: | 1. Instituto de Micro y Nanotecnología CNM, CSIC, Calle Isaac Newton, 8. Tres Cantos, 28760 Madrid, Spain;2. Instituto Politécnico Nacional, UPALM, Edif. Z-4 3er Piso, CP 07738, México CDMX, México;3. Instituto IMDEA-nanociencia, Calle Faraday, 9, 28049 Madrid, Spain |
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Abstract: | It is shown that the total number of impurities per cm2 in the quasi-neutral base region of narrow-base transistors and their current-gain β strongly depend upon the emitter-base voltage VBE. The computed results demonstrate that the β of these transistors falls considerably with VBE increase, even in the absence of high-injection effects. The analysis also shows that the collector current of narrow-base transistors increases slower than exp (VBE/VT) giving rise to a non-ideality factor greater than one. It is concluded that narrow-base transistors with higher base resistivities are more susceptible to these effects. |
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