Diffusivity of anion vacancies in WO3 passive films

The WO₃ films were grown in 0.1 M HClO₄ aqueous solution, at different formation potentials (E_f) in the range of 2.0-7.0 V versus sce, on W electrode. The anion diffusion coefficient (DO) of WO₃ films was calculated from EIS spectra, following the surface charge approach (at high-field limit approximation), the Point Defect Model and the Mott-Shottky analysis. Among the parameters necessary to evaluate DO, the half-jump distance (a) is very relevant, given that a small variation in a has a great impact in the calculation of DO. In this work, it is proposed the half-jump distance (a) should be evaluated from spectroscopic data (available in the literature). The value of a (∼1.9 Å) is taken from lattice constants of a-WO₃ (amorphous-WO₃), with different values of N (coordination number), and the lattice constants of m-WO₃ (monoclinic-WO₃). The calculated value of DO was ∼3 × 10⁻¹⁷ cm²/s.