Electroless deposition of transparent conducting and 〈0 0 0 1〉-oriented ZnO films from aqueous solutions |
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Authors: | Tsutomu Shinagawa Satomi Otomo Masanobu Izaki |
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Affiliation: | a Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553, Japan b Basic Research Laboratory, Okuno Chemical Industries Co., Ltd., 1-10-25 Hanaten-higashi, Tsurumi-ku, Osaka 538-0044, Japan |
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Abstract: | Electroless ZnO deposition on a glass substrate from dissolved oxygen-free aqueous solutions containing Zn(NO3)2 and dimethylamineborane (DMAB) was examined to yield ZnO films applicable to a transparent conducting oxide (TCO). Concentration of Zn(NO3)2 was optimized in terms of crystal growth orientation and surface morphology using XRD and AFM, and that ranging from 0.065 to 0.075 M was found to provide well 〈0 0 0 1〉-oriented dense ZnO films. The polycrystalline ZnO films deposited with Zn(NO3)2 concentration of 0.07 M had a preferred 〈0 0 0 1〉 growth orientation and exhibited high visible transparency. Top-view and cross-sectional FE-SEM images revealed that hexagonal columnar ZnO grains with 200 nm in diameter and 290 nm in length grew almost vertically from a glass substrate. Heat treatment at 723 K under a reductive atmosphere was performed to increase the intrinsic carrier concentration in the ZnO film, and Hall effect measurements revealed low electrical resistivity of 4.7 × 10−3 Ω cm. |
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Keywords: | Electroless deposition Zinc oxide Dissolved oxygen Transparent conducting oxide Aqueous solution |
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