New formation process of plating thin films on several substrates by means of self-assembled monolayer (SAM) process |
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Authors: | Tetsuya Osaka Masahiro Yoshino |
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Affiliation: | Department of Applied Chemistry, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo 169-8555, Japan |
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Abstract: | This review describes our recent works on the preparation of Ni-alloy films deposited by electroless deposition as a diffusion barrier layer for ultra large-scale integration (ULSI) interconnects by using an all-wet process.In this process, we create a novel wet fabrication process including a self-assembled monolayer (SAM) as an attachment technique between diffusion barrier layer and a substrate. Our proposal process was applied to the substrates of SiO2/Si and both organic (methyl silsesquioxane) and inorganic (hydrogen silsesquioxane) low-k dielectrics. The key technique of this proposed process is using SAM as a catalyst trapping layer. The Ni-alloy films such as NiB were deposited on catalyzed SiO2 or low-k substrates. The electrolessly deposited NiB films were found to exhibit sufficient thermal stability and an acceptable barrier property for preventing Cu diffusion into the SiO2 and low-k dielectrics. |
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Keywords: | Self-assembled monolayer Electroless deposition ULSI Damascene process Diffusion barrier layer |
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