沉积温度和时间对多孔SiC薄膜的光致发光性能的影响

为了增强碳化硅(SiC)的光致发光性能,设计了三层结构的多孔SiC薄膜,衬底是单晶硅,中间层是双通阳极氧化铝(AAO)模板,顶层是SiC薄膜.采用磁控溅射工艺在AAO模板上沉积SiC薄膜,沉积温度为100～500℃,溅射时间为1～30 min.研究了沉积温度和沉积时间对SiC的光致发光性能的影响.结果表明:SiC薄膜为...

Effects of Deposition Temperature and Time on Photoluminescence Performance of Porous SiC Film

In order to improve the photoluminescence (PL) performance of SiC, a three-layer structure porous SiC film was designed, the substrate was single crystal Si, the middle layer was the double pass anodic aluminum oxide (AAO) template, and the top layer was SiC film. SiC film was deposited on AAO template by magnetron sputtering, the deposition temperature was 100 ℃ to 500 ℃, and the deposition time was 1 min to 30 min. The effect of deposition temperature and time on PL property of SiC was investigated. The results show that the SiC film is amorphous phase, and SiC is mainly deposited on the upper skeleton structure of AAO template. At the deposition temperature of 200 ℃ and deposition time of 1 min, the PL intensity of SiC is enhanced to 14.23 times of blank sample. PL of porous SiC film is mainly from the main peak of 2.3 eV and the secondary peak of 2.8 eV. The main PL peak may be caused by the O vacancy in Al₂O₃ and SiC intrinsic PL. The secondary PL peak maybe comes from O vacancy in SiO₂. The magnetron sputtering processing combined with AAO template is suitable to the rapid industrial fabrication of porous SiC film.