Characteristics of siliconn+-n--n+ diode with sub-micrometer n- region |
| |
Authors: | Nishizawa J Takeda N Masuoka F |
| |
Affiliation: | Tohoku Univ., Sendai; |
| |
Abstract: | In this paper, the I-V characteristics of silicon n+-n --n+ diode are investigated as a parameter of the length of the n- region. This diode with shorter n- region than 1 μm has the ohmic characteristics until reaching high electric field in spite of the existence of numerous space-charges in the n- region, for the first time in this report. This conductance of the diode is inversely proportional to the third power of the length of the n- region. The experimental results are in good agreement with an analytical calculation including the diffusion term of carriers injected from the n+ regions to the n- region. However, the diode with longer n- region than 2 μm shows the space-charge-limited conduction which is the same as earlier reports |
| |
Keywords: | |
|
|