| 用Cr/Au/Ni/Au制备n-GaN欧姆接触 |
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| 引用本文： | 谢雪松,张小玲,吕长志,武利,袁颖,李志国,曹春海.用Cr/Au/Ni/Au制备n-GaN欧姆接触[J].北京工业大学学报,2005,31(5):449-451. |
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| 作者姓名： | 谢雪松 张小玲 吕长志 武利 袁颖 李志国 曹春海 |
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| 作者单位： | 北京工业大学,电子信息与控制工程学院,北京,100022;南京固体器件研究所,南京,210016 |
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| 摘 要： | 为了获得n-GaN的低接触电阻的欧姆接触,采用Cr/Au/Ni/Au金属化系统与n—GaN形成欧姆接触,并对其不同温度下的接触电阻率进行了测试分析.室温下Cr/Au/Ni/Au的接触电阻率为0.32mΩ·m2。随着温度的升高,接触电阻率略有增加,在300℃时接触电阻率为0.65mΩ·cm2,因此此欧姆接触适合在高温下使用.
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| 关 键 词： | n-GaN材料 欧姆接触 接触电阻率 |
| 文章编号： | 0254-0037（2005）05-0449-03 |
| 收稿时间： | 2003-12-25 |
| 修稿时间： | 2003年12月25 |
n-GaN Ohmic Contact With Cr/Au/Ni/Au |
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| XIE Xue-song,ZHANG Xiao-ling,L Chang-zhi,WU Li,YUAN Ying,LI Zhi-guo,CAO Chun-hai.n-GaN Ohmic Contact With Cr/Au/Ni/Au[J].Journal of Beijing Polytechnic University,2005,31(5):449-451. |
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| Authors: | XIE Xue-song ZHANG Xiao-ling L Chang-zhi WU Li YUAN Ying LI Zhi-guo CAO Chun-hai |
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| Affiliation: | XIE Xue-song,ZHANG Xiao-ling,L(ü) Chang-zhi,WU Li,YUAN Ying,LI Zhi-guo,CAO Chun-hai |
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| Abstract: | To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/Au/Ni/Au metallic system that was fabricated in n-GaN materials has been developed. The contact resistivity of ohmic contact was tested and analyzed at different temperatures. The contact resistivity of Cr/Au/Ni/Au is about 0.32 mΩ·cm2 at room temperature. With the increasing of temperature, the contact resistivity of Cr/Au/Ni/Au increases a little. At 300℃, its contact resistivity is 0.65 mΩ-cm2. The ohmic contact is suitably used at high temperature. |
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| Keywords: | n-GaN materials ohmic contact contact resistivity |
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