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| CVD方法制备ZnSe系统中尾气的处理 | |
| 引用本文： | 石红春,朱时珍,鲁泥藕,霍承松,赵永田,杨海.CVD方法制备ZnSe系统中尾气的处理[J].稀有金属,2005,29(5):738-741. |
| 作者姓名： | 石红春 朱时珍 鲁泥藕 霍承松 赵永田 杨海 |
| 作者单位： | 1. 北京理工大学材料科学与工程学院,北京,100081;北京国晶辉红外光学科技有限公司,北京,100088 2. 北京理工大学材料科学与工程学院,北京,100081 3. 北京国晶辉红外光学科技有限公司,北京,100088 |
| 摘 要： | CVDZnSe是目前光学性能最好的红外光学材料之一。但在制备CVDZnSe时，尾气中未反应完全的剧毒硒化氢气体，对操作人员及环境的危害很大。采用逆流填料塔来吸收CVD方法制备ZnSe系统中的剧毒尾气硒化氢。为加快传质速率，提高吸收率，选用NaOH溶液作吸收液；利用H2Se气体与此溶液反应，降低气体在水溶液中的浓度，加大传质推动力；选择了具有高效分离因子的填料以减小塔身的高度和直径。并且对循环吸收液进行氧化，双重过滤等处理。最后用型号为TX—FMD的H2Se检测仪测量处理后的尾气中H2Se气体的含量，达到排放要求。 |
| 关 键 词： | H2Se气体 逆流填料塔 化学吸收 传质 |
| 文章编号： | 0258-7076（2005）05-0738-04 |
| 收稿时间： | 2005-05-28 |
| 修稿时间： | 2005-05-282005-08-17 |
Elimination of H2Se in Exhaust Gas of Chemical Vapor Deposit System |
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| Shi Hongchun,Zhu Shizhen,Lu Niou,Huo Chengsong,Zhao Yongtian,Yang Hai.Elimination of H2Se in Exhaust Gas of Chemical Vapor Deposit System[J].Chinese Journal of Rare Metals,2005,29(5):738-741. | |
| Authors: | Shi Hongchun Zhu Shizhen Lu Niou Huo Chengsong Zhao Yongtian Yang Hai |
| Affiliation: | 1. College of Materials Science and Technology, Beijing Institute of Technology, Beijing 100081, China ; 2. Beijing Guojing Infrared Optical Technology Co. Ltd. , Beijing 100088, China |
| Abstract: | CVD ZnSe is one of the materials which has the best optical properties. But its preparation will bring virulent gas which will be dangerous for the health of workers and the environment. In this paper, the means for elimination of H2Se in exhaust gas of chemical vapor deposit system was described. In order to quicken the speed of mass transport and increase the absorption velocity, NaOH solution was chosen as absorber. And high efficient segregation factor was selected for filling. Furthermore, the absorber was oxidized and dual-filtrated before it was vented. As a resuit, the content of H2Se measured by TX-FMD is less than 0.01 ppm. |
| Keywords: | H2Se gas absorption tower chemical absorption mass transmission |
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