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Ion-beam-induced-charge characterisation of particle detectors
Authors:C. Yang   D. N. Jamieson   S. M. Hearne   C. I. Pakes   B. Rout   E. Gauja   A. J. Dzurak  R. G. Clark
Affiliation:

a Centre for Quantum Computer Technology, Microanalytical Research Centre, School of Physics, University of Melbourne, Parkville, Vic. 3010, Australia

b Centre for Quantum Computer Technology, University of New South Wales, Sydney 2052, Australia

Abstract:Ion-beam-induced-charge collection (IBIC) in a nuclear microprobe has been used to characterise detectors for the measurement of particles over a median energy range (100 keV–1 MeV). Three standard detector devices have been studied: a PIPS detector with a buried (ion-implanted) junction structure, a Schottky barrier junction device and a PN-junction photodiode. A 2.0 MeV focussed helium ion beam was used to probe the active area of each device with a spatial resolution 1–2 μm, to quantify the thickness of the dead layer, the charge collection response and the reduction in charge collection efficiency induced by ion-beam damage.
Keywords:IBIC   Nuclear microprobe   Dead layer   Charge collection efficiency   Pulse height defects   Ion-beam damage
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