| VHF-PECVD制备硅薄膜的光发射谱在线监测研究 |
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| 引用本文： | 张丽珠,张晓丹,赵颖,朱锋,魏长春,高艳涛,耿新华,熊绍珍.VHF-PECVD制备硅薄膜的光发射谱在线监测研究[J].光电子技术,2004,24(4):230-233. |
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| 作者姓名： | 张丽珠 张晓丹 赵颖 朱锋 魏长春 高艳涛 耿新华 熊绍珍 |
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| 作者单位： | 天津机电职业技术学院,天津,300131;南开大学光电子·电子薄膜器件与技术研究所,天津,300071 |
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| 基金项目： | 国家“973”重大基础研究项目 (No .G2 0 0 0 0 2 82 0 2 ,G2 0 0 0 0 2 82 0 3)，教育部重大项目 (No .0 2 16 7)，国家“86 3”重大项目 (No .2 0 0 2 30 32 6 1) |
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| 摘 要： | 用光发射谱(OES)和喇曼散射谱(Raman)研究了VHF-PECVD制备硅薄膜的结构特性。OES测试结果表明：随功率增加，对应各基团峰的强度增大；结合喇曼的测试结果，OES谱得到的结果可以用来定性地表征制备薄膜的晶化程度；纯化器可以降低制备薄膜中的氧含量，Raman测试结果表明相应的晶化率低。
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| 关 键 词： | 甚高频等离子体增强化学气相沉积 光发射谱 喇曼散射谱 |
| 文章编号： | 1005-488X(2004)04-0230-04 |
| 修稿时间： | 2004年4月23日 |
Study on Silicon Thin Film Deposited by VHF-PECVD Using OES Online Monitor |
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| ZHANG Li-zhu,ZHANG Xiao-dan,ZHAO Ying,ZHU Feng,WEI Chang-chun,GAO Yan-tao,GENG Xin-hua,XIONG Shao-zhen.Study on Silicon Thin Film Deposited by VHF-PECVD Using OES Online Monitor[J].Optoelectronic Technology,2004,24(4):230-233. |
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| Authors: | ZHANG Li-zhu ZHANG Xiao-dan ZHAO Ying ZHU Feng WEI Chang-chun GAO Yan-tao GENG Xin-hua XIONG Shao-zhen |
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| Affiliation: | ZHANG Li-zhu1,ZHANG Xiao-dan2,ZHAO Ying2,ZHU Feng2,WEI Chang-chun2,GAO Yan-tao2,GENG Xin-hua2,XIONG Shao-zhen2 |
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| Abstract: | Structural properties of silicon thin film deposited by VHF-PECVD were studied using OES and Raman spectroscopy. The results of OES measurement showed that the intensity of peaks of different precursors increased with the increase of discharge power. According to the results obtained from Raman, OES can be used to qualitatively characterize the crystalline extent. The use of purifier can decrease the oxygen content of films, crystalline volume fraction (X c) derived from Raman measurement simultaneously indicated low value. |
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| Keywords: | VHF-PECVD optical emission spectroscopy Raman spectroscopy |
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