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硅光电二极管结构特性研究
引用本文:宋玲玲. 硅光电二极管结构特性研究[J]. 微处理机, 2021, 0(1): 34-36
作者姓名:宋玲玲
作者单位:中国电子科技集团公司第四十七研究所
摘    要:为探讨光电二极管工作机理及其改进潜力,从一款常规光电二极管应用产品的设计入手,采用光敏区尺寸逐渐变大、呈规律性排列的硅光电二级管串联的结构,分析其特性与机理.在此基础上对同类产品进行优化,详细阐述新结构工艺原理与实现方式,分别从器件结构、工作原理、不同结构的优劣点等方面对比改进前后两种不同结构光电二极管的特性.从工艺参...

关 键 词:光电二极管  器件结构  工艺参数

Study on Structural Characteristics of Silicon Photodiode
SONG Lingling. Study on Structural Characteristics of Silicon Photodiode[J]. Microprocessors, 2021, 0(1): 34-36
Authors:SONG Lingling
Affiliation:(The 47th Institute of China Electronics Technology Group Corporation,Shenyang 110000,China)
Abstract:In order to discuss the working mechanism and improvement potential of photodiodes,starting with the design of a conventional photodiode application product,the series structure of silicon photodiodes with gradually larger photosensitive area and regularly arranged is adopted,and its characteristics and mechanism are analyzed.On this basis,the similar products are optimized,and the process principle and implementation of the new structure are elaborated in detail.The characteristics of two different structures of photodiodes before and after improvement are compared from the aspects of device structure,working principle and advantages and disadvantages of different structures.The selection of substrate type and substrate resistivity,and the determination of anti-reflection film structure and thickness of the improved photodiode are analyzed in detail from the angle of process parameter selection.The optimization of the device's ID dark current parameter control is also discussed.
Keywords:Photodiode  Device structure  Process parameter
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