Preparation of SiC-based cellular substrate by pressure-pulsed chemical vapor infiltration into honeycomb-shaped paper preforms

Using a pressure-pulsed chemical vapor infiltration technique, SiC was infiltrated from a SiCl₄ (4%)–CH₄ (4%)–H₂ gas phase into carbonized paper preforms at 1100°C. SiC-based cellular substrates with cell wall thicknesses of 25, 50 and 100 m were obtained by using honeycomb-shaped paper preforms as the templates. The reduction of both wall thickness t and cell pitch d of SiC-based honeycomb substrate successfully led to an increase in geometric surface area per unit volume S, keeping pressure drop P at constant, besides; P decreased without lowering S by the reduction of t and the increase in d. The pressure drop in the prepared honeycomb substrates depended on S ^2–3 value, where was open frontal area fraction. The compressive strength of the honeycomb substrates with t of 25 m was about 7 MPa. The strength increased in proportion with 1 – , which corresponded to the volume fraction of the cell wall in the honeycomb substrate.