High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation |
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| Authors: | Ankri D. Schaff W.J. Smith P. Eastman L.F. |
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| Affiliation: | Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA; |
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| Abstract: | GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy (MBE) on semi-insulating substrates. A gain-bandwidth product FT of 15 GHz has been measured for Ic = 20 mA and VCE = 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic. |
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