| Monte Carlo Simulation of Damage Depth in Focused Ion Beam Milling Si3N4 Thin Film |
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| 作者姓名： | TAN Yong-wen XIE Xue-bing Jack Zhou XU Tian-wei YANG Wei-guo YANG Hai |
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| 作者单位： | [1]Department of Physics, Yunnan Normal University, Kunming 650092, CHN [2]Department of Mechanical Engineering and Mechanics, Drexel University, Phiadelphia, PA 19104, USA [3]Department of Computer, Yunnan Normal University, Kunming 650092, CHN |
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| 摘 要： | The damage properties of Focused Ion Beam（FIB） milling Si3N4 thin film are investigated by the detailed analyzing images of nanoholes and simulation of Monte Carlo. The damage depth in the Si3N4 thin film for two different ion species（Gallium and Arsenic） under various parameters（ion energy, angle of incidence） are investigated by Monte Carlo method. The simulations show the damage depth increases with the increasing ion energy, the damage depth is dependent on the angle of incident ion, the curves of the damage depth for Ga ion and As ion at 30 keV nearly superpose, while the damage depth for Ga with 90 keV ion is more than that for As ion with the same energy.
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| 关 键 词： | 聚焦技术 半导体 Si3N4 薄膜 |
| 文章编号： | 1007-0206（2007）04-0272-04 |
| 收稿时间： | 2007-10-25 |
| 修稿时间： | 2007-11-13 |
Monte Carlo Simulation of Damage Depth in Focused Ion Beam Milling Si3N4 Thin Film |
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| TAN Yong-wen XIE Xue-bing Jack Zhou XU Tian-wei YANG Wei-guo YANG Hai.Monte Carlo Simulation of Damage Depth in Focused Ion Beam Milling Si3N4 Thin Film[J].Semiconductor Photonics and Technology,2007,13(4):272-275,288. |
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| Authors: | TAN Yong-wen XIE Xue-bing Jack Zhou XU Tian-wei YANG Wei-guo YANG Hai |
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| Abstract: | The damage properties of Focused Ion Beam(FIB) milling Si3N4 thin film are investigated by the detailed analyzing images of nanoholes and simulation of Monte Carlo. The damage depth in the Si3N4 thin film for two different ion species(Gallium and Arsenic) under various parameters(ion energy, angle of incidence) are investigated by Monte Carlo method. The simulations show the damage depth increases with the increasing ion energy, the damage depth is dependent on the angle of incident ion, the curves of the damage depth for Ga ion and As ion at 30 keV nearly superpose, while the damage depth for Ga with 90 keV ion is more than that for As ion with the same energy. |
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| Keywords: | monte carlo method focused ion beam effects damage depth |
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