In-Plane Polarized 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films |
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| Authors: | Qifa Zhou Qingqi Zhang Baomin Xu Susan Trolier-McKinstry |
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| Affiliation: | Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802 |
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| Abstract: | Ferroelectric 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN-PT) thin films were deposited on ZrO2/SiO2/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (～24 μC/cm2) than for through-the-thickness polarized PMN-PT thin films (10–12 μC/cm2) deposited on Pt/Ti/Si substrates. For a finger spacing of 20 μm, the piezoelectric voltage sensitivity of in–plane polarized PMN-PT thin films was ～20 times higher than that of through-the-thickness polarized PMN-PT thin films. |
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| Keywords: | ferroelectricity/ferroelectric materials thin films electrical properties |
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