| X波段移相器中低弹性系数RF-MEMS开关的研究 |
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| 引用本文： | 臧法珩,丁桂甫,宿智娟. X波段移相器中低弹性系数RF-MEMS开关的研究[J]. 传感器与微系统, 2010, 29(9) |
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| 作者姓名： | 臧法珩 丁桂甫 宿智娟 |
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| 作者单位： | 上海交通大学微纳科学技术研究院薄膜与微细技术教育部重点实验室微米/纳米加工技术国家级重点实验室; |
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| 摘 要： | 讨论了一种应用于X波段开关线型移相器中的新型低弹性系数RF-MEMS静电式开关的设计.通过对多臂梁式结构RF-MEMS开关的力学性能和电学性能进行有限元仿真和优化,开关的弹性系数为17.63N/m.在10GHz的工作频率下,此RF-MEMS开关驱动电压为36.5V,移相器的插入损耗小于9dB.
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| 关 键 词： | 射频MEMS 开关线性移相器 插入损耗 |
Research on the RF-MEMS switch with low elasticity coefficient in the X-band phase shifter |
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| ZANG Fa-heng,DING Gui-fu,SU Zhi-juan. Research on the RF-MEMS switch with low elasticity coefficient in the X-band phase shifter[J]. Transducer and Microsystem Technology, 2010, 29(9) |
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| Authors: | ZANG Fa-heng DING Gui-fu SU Zhi-juan |
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| Affiliation: | ZANG Fa-heng,DING Gui-fu,SU Zhi-juan (National Key Laboratory of Micro/Nano Fabrication Technology,Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education,Research Institute of Micro/Nano Science and Technology,Shanghai Jiao Tong University,Shanghai 200240,China) |
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| Abstract: | An electrostatic RF-MEMS switch with low coefficient of elasticity was designed and implemented in the X-band switched-line phase shifter.By the simulation and optimization with the finite element methods in both mechanical and electrical properties of the multi-anchored beams,achieved the actuation voltage is 36.5 V and the elasticity coefficient is 17.63 N/m.In the operation frequency of 10 GHz,the insertion loss of the phase shifter is limited below 9 dB. |
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| Keywords: | RF-MEMS switched-line phase shifter insertion loss |
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